IRF3710Z mosfet equivalent, hexfet power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l.
IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 18mΩ
G
ID = 59A
S
TO-220AB
D2P.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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