IRF3710ZGPbF mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l.
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IRF3710ZGPbF
HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ ID = 59A
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TO-220AB IRF3710ZGPbF
Absolute Maximum R.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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