IRF3205ZSPbF datasheet, mosfet equivalent, International Rectifier

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Features and benefits

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF320.

Application

S ID = 75A TO-220AB D2Pak TO-262 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Absolute Maximum Ratings Parameter ID @.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

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