IRF3205 transistor equivalent, n-channel trench process power mosfet transistor.
* VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test
Application
* Hard Switched and High Frequency.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .
Features
* VDS=55V; ID=105A@ VGS=.
The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .
Features
* VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V.
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