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IRF3205ZPbF - Power MOSFET

Download the IRF3205ZPbF datasheet PDF. This datasheet also covers the IRF3205ZSPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3205ZSPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF3205Z Power MOSFET
IRF3205ZL Power MOSFET
IRF3205ZLPbF Power MOSFET
IRF3205ZS Power MOSFET
IRF3205ZSPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
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