IRF3205ZPbF mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
IRF320.
S
ID = 75A
TO-220AB
D2Pak
TO-262
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF
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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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