AUIRFR4620 datasheet, mosfet equivalent, International Rectifier

Features and benefits

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* HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperatur.

Application

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera.

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