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* AUIRFR4292 AUIRFU4292 HEXFET® Power MOSFET D G S Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fas.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

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