AUIRFR4105Z Datasheet | International Rectifier

.. - 97544 AUTOMOTIVE GRADE HEXFET® Power MOSFET Features - - - - - - - AUIRFR4105Z AUIRFU4105Z 55V 24.5mΩ 30A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, Ro HS pliant Automotive Qualified - D V(BR)DSS RDS(on) max. ID Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak AUIRFR4105Z I-Pak AUIRFU4105Z Gate Drain Source...