AUIRFB4610 datasheet, mosfet equivalent, International Rectifier

Features and benefits

l l l l l l l l HEXFET® Power MOSFET D AUIRFB4610 AUIRFS4610 100V 11m: 14m: 73A Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability.

Application

this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Ad.

Description

Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fas.

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