l l l l l l l AUIRFB3207 75V 3.6mΩ 4.5mΩ 170A 75A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Al.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

AUIRFB4410

AUIRFB4610

AUIRFB8405

AUIRFB8407

AUIRFB8409

AUIRFBA1405

AUIRF1010EZ

AUIRF1010EZL

AUIRF1010EZS

AUIRF1010Z

AUIRF1010ZL

AUIRF1010ZS

AUIRF1324

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