AUIRFB8407 mosfet equivalent, power mosfet.
Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Comp.
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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniq.
40V typ. 1.4mΩ (SMD version) max 1.8mΩ ID (Silicon Limited) 250A ID (Package Limited)
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VDSS RDS(on)
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Applications
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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to a.
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