AUIRF7342Q datasheet, mosfet equivalent, International Rectifier

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Features and benefits

/www.datasheet4u.com/ AUIRF7342Q 3.5 3.0 -I D, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 T A , Ambient Temperature (°C) Fig 13. Maximum Drain Cur.

Application

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.

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