AUIRF7343Q
AUIRF7343Q is Dual N/P-Channel MOSFET manufactured by Infineon.
AUTOMOTIVE GRADE
Features
- Advanced Planar Technology
- Ultra Low On-Resistance
- Logic Level Gate Drive
- Dual N and P Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- 150°C Operating Temperature
- Lead-Free, Ro HS pliant
- Automotive Qualified
- N-CHANNEL MOSFET
N-CH P-CH
S1 1 G1 2
8 D1 7 D1
VDSS
55V -55V
S2 3
6 D2 RDS(on) typ. 0.043 0.095
G2 4
5 D2 max. 0.050 0.105
P-CHANNEL MOSFET
4.7A -3.4A
Top View
Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in...
