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AUIRF7341Q - Dual N-Channel MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Overview

  AUTOMOTIVE GRADE AUIRF7341Q.

Key Features

  • Advanced Planar Technology.
  • Ultra Low On-Resistance.
  • Logic Level Gate Drive.
  • Dual N Channel MOSFET.
  • Surface Mount.
  • Available in Tape & Reel.
  • 175°C Operating Temperature.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View.