AUIRF7342Q Datasheet Dual P-Channel MOSFET

Manufacturer: Infineon

AUIRF7342Q dual p-channel mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	AUIRF7342Q
Manufacturer	Infineon
File Size	249.73 KB
Description	Dual P-Channel MOSFET
Datasheet	AUIRF7342Q Datasheet

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

SO-8 AUIRF7342Q G Gate D Drain -55V 0.105 -3.4A S Source Base part number AUIRF7342Q Package Type SO-8 Standard Pack Form Quantity Tape

Overview

AUTOMOTIVE GRADE AUIRF7342Q.

Key Features

Advanced Planar Technology.
Low On-Resistance.
Logic Level Gate Drive.
Dual P Channel MOSFET.
Dynamic dv/dt Rating.
150°C Operating Temperature.
Fast Switching.
Fully Avalanche Rated.
Lead-Free, RoHS Compliant.
Automotive Qualified.
S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS RDS(on) max. ID.

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