AUIRF2907Z datasheet, mosfet equivalent, International Rectifier

Features and benefits

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* HEXFET® Power MOSFET D AUIRF2907Z 75V 4.5mΩ 170A 75A
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* Advanced Process Technology Ultra Low On-Resistance 175°C Operating Tem.

Application

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

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