l l l l l l l D 55V 11.1mΩ 14.5mΩ 59A k 42A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera.

AUIRF2903Z

AUIRF2903ZL

AUIRF2903ZS

AUIRF2907Z

AUIRF2907ZS-7P

AUIRF2804

AUIRF2804L

AUIRF2804S

AUIRF2804S-7P

AUIRF2805

AUIRF2805L

AUIRF2805S

AUIRF2807

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts