l l l l l l l V(BR)DSS RDS(on) typ. 30V 1.9mΩ 2.4mΩ 260Ak 160A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitiv.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

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