AUIRF1324S-7P datasheet, mosfet equivalent, International Rectifier

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 320.07KB)

Features and benefits

l l l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to T.

Application

this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-res.

Description

Specifically designed for Automotive applications, this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junctio.

Image gallery