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AUIRF1324S-7P - Power MOSFET

Download the AUIRF1324S-7P datasheet PDF. This datasheet also covers the AUIRF1324L-7P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) typ. max. 24V 0.8mΩ 429A c 240A 1.0mΩ G S S (Pin 2, 3, 5, 6, 7) G (Pin 1) ID (Silicon Limited) ID (Package Limited).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF1324L-7P_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF1324S Power MOSFET Infineon
AUIRF1324L Power MOSFET Infineon
AUIRF1010EZ Power MOSFET Infineon
AUIRF1010EZL Power MOSFET Infineon
AUIRF1010EZS Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF1324S Power MOSFET
AUIRF1324 Power MOSFET
AUIRF1324L Power MOSFET
AUIRF1324WL Power MOSFET
AUIRF1010EZ Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 96296 AUIRF1324S-7P Features l l l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) typ. max. 24V 0.8mΩ 429A c 240A 1.0mΩ G S S (Pin 2, 3, 5, 6, 7) G (Pin 1) ID (Silicon Limited) ID (Package Limited) Description Specifically designed for Automotive applications, this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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