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AUIRF1324 - Power MOSFET

General Description

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Key Features

  • l l l l l l l AUIRF1324 VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 1.2m: 1.5m: 353A 195A HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D G S c Specifically designed for Automotive.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF1324L Power MOSFET Infineon
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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97482 AUTOMOTIVE GRADE Features l l l l l l l AUIRF1324 VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 1.2m: 1.5m: 353A 195A HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S c Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve www.DataSheet4U.com extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .