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AUIRF1324S - Power MOSFET

Download the AUIRF1324S datasheet PDF. This datasheet also covers the AUIRF1324L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • VDSS RDS(on) typ. ID (Silicon Limited) ID (Package Limited) G S 24V 1.3mΩ 340A 195A c www. DataSheet4U. com.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF1324L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF1324S Power MOSFET Infineon
AUIRF1324L Power MOSFET Infineon
AUIRF1010EZ Power MOSFET Infineon
AUIRF1010EZL Power MOSFET Infineon
AUIRF1010EZS Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF1324S-7P Power MOSFET
AUIRF1324 Power MOSFET
AUIRF1324L Power MOSFET
AUIRF1324WL Power MOSFET
AUIRF1010EZ Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRF1324S AUIRF1324L HEXFET® Power MOSFET D PD - 97483 Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) typ. ID (Silicon Limited) ID (Package Limited) G S 24V 1.3mΩ 340A 195A c www.DataSheet4U.com Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .