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RD38F2240 - MIXED MEMORY

General Description

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Key Features

  • Device Architecture.
  • Flash Density: 32-Mbit, 64-Mbit.
  • Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit.
  • Top, Bottom or Dual flash parameter configuration Device Voltage.
  • Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V.
  • RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V Device Packaging.
  • 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm PSRAM Performance.
  • 70.

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Datasheet Details

Part number RD38F2240
Manufacturer Intel
File Size 742.19 KB
Description MIXED MEMORY
Datasheet download datasheet RD38F2240 Datasheet

Full PDF Text Transcription for RD38F2240 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RD38F2240. For precise diagrams, and layout, please refer to the original PDF.

Intel® Wireless Flash Memory (W18/W30 SCSP) 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features ■ ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, ...

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duct Features ■ ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit — Top, Bottom or Dual flash parameter configuration Device Voltage — Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V — RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V Device Packaging — 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm PSRAM Performance — 70 ns initial access, 25 ns async page reads at 1.8 V I/O — 70 ns initial access async PSRAM at 1.8V I/O — 88 ns initial access, 30 ns async page reads at 1.8 V I/O — 85 ns initial access, 35 ns asyn

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