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RD38F2010 - (RD38F2xxx) FLASH+PSRAM

Download the RD38F2010 datasheet PDF. This datasheet also covers the RD38F2240 variant, as both devices belong to the same (rd38f2xxx) flash+psram family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter.

Key Features

  • Device Architecture.
  • Flash Density: 32-Mbit, 64-Mbit.
  • Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit.
  • Top, Bottom or Dual flash parameter configuration Device Voltage.
  • Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V.
  • RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V Device Packaging.
  • 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm PSRAM Performance.
  • 70.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RD38F2240_Intel.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RD38F2010
Manufacturer Intel
File Size 742.19 KB
Description (RD38F2xxx) FLASH+PSRAM
Datasheet download datasheet RD38F2010 Datasheet

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Other Datasheets by Intel

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Intel® Wireless Flash Memory (W18/W30 SCSP) 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features ■ ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit — Top, Bottom or Dual flash parameter configuration Device Voltage — Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V — RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V Device Packaging — 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm PSRAM Performance — 70 ns initial access, 25 ns async page reads at 1.8 V I/O — 70 ns initial access async PSRAM at 1.8V I/O — 88 ns initial access, 30 ns async page reads at 1.8 V I/O — 85 ns initial access, 35 ns async page reads at 3.