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IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM

Description

ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288

Features

  • Clock frequency: 200, 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Two banks can be operated simultaneously and independently.
  • Dual internal bank controlled by A11 (bank select).
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • 2048 refresh cycles every 32 ms.

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📁 Similar Datasheet

Part Number Description Manufacturer
IS42S16100A1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM ISSI
IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM ISSI
IS42S16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM ISSI
IS42S16100H 16Mb SYNCHRONOUS DYNAMIC RAM ISSI
IS42S16128 128K words x 16 Bits x 2 Banks SDRAM Integrated Silicon

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160B 256-MBIT SYNCHRONOUS DRAM
IS42S16160D 256-MBIT SYNCHRONOUS DRAM
IS42S16320B 32M x 16 512Mb SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42S16100 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEBRUARY 2008 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.
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