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IS41LV16100S - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Description

16-bit high-performance CMOS Dynamic Random Access Memories.

These devices offer an accelerated cycle access called EDO Page Mode.

Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs; tristate I/O.
  • Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms.
  • JEDEC standard pinout.
  • Single power supply: 5V ± 10% (IS41C16100S) 3.3V ± 10% (IS41LV16100S).
  • Byte Write and Byte Read operation via two CAS.
  • Industrail Temperature Range -40°C to 85°C www. DataSheet4U.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16105 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV16105B 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

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IS41C16100S IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: 5V ± 10% (IS41C16100S) 3.3V ± 10% (IS41LV16100S) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40°C to 85°C www.DataSheet4U.com DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode.
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