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INN700D190B Datasheet, Innoscience

INN700D190B transistor equivalent, 700v gan enhancement-mode power transistor.

INN700D190B Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 2.65MB)

INN700D190B Datasheet

Features and benefits

 Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for.

Application

according to JEDEC Standards  ESD safeguard  RoHS, Pb-free, REACH-compliant 3. Applications  DCM/BCM PFC  AHB/LLC/Q.

Description

700V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size 2. Features  Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low ga.

Image gallery

INN700D190B Page 1 INN700D190B Page 2 INN700D190B Page 3

TAGS

INN700D190B
700V
GaN
Enhancement-mode
Power
Transistor
Innoscience

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