INN150FQ032A Overview
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.
INN150FQ032A Details
| Part number | INN150FQ032A |
|---|---|
| Datasheet | INN150FQ032A-Innoscience.pdf |
| File Size | 1.12 MB |
| Manufacturer | Innoscience |
| Description | 150V Enhancement-mode GaN Power Transistor |
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