Datasheet4U Logo Datasheet4U.com

SPU09P06PL - SIPMOS Power-Transistor

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Final data SPD09P06PL SPU09P06PL Product Summary VDS RDS(on) ID P-TO251-3-1 Feature SIPMOS =Power-Transistor  P-Channel  Enhancement mode  Logic Level www.DataSheet4U.com 175°C operating temperature  Avalanche rated  dv/dt rated -60 0.25 -9.7 P-TO252 V  A Drain pin 2 Type SPD09P06PL SPU09P06PL Package P-TO252 P-TO251-3-1 Ordering Code Q67042-S4007 Q67042-S4020 Gate pin1 Source pin 3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value -9.7 -6.8 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg -38.8 70 4.2 6 ±20 42 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID =-9.
Published: |