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CoolMOS® Power Transistor
Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q g,typ
IPA60R199CP
650 V 0.199 Ω
32 nC
PG-TO220
CoolMOS CP is designed for: • Hard switching SMPS topologies
Type IPA60R199CP
Package PG-TO220
Marking 6R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current2)
Pulsed drain current3) Avalanche energy, single pulse
Symbol Conditions I D T C=25 °C
T C=100 °C I D,pulse T C=25 °C E AS I D=6.6 A, V DD=50 V
Avalanche
energy,
repetitive
t
3),4) AR
E AR
I D=6.
IPA60R199CP Datasheet
