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PXAC192908FV Datasheet, Infineon

PXAC192908FV fet equivalent, thermally-enhanced high power rf ldmos fet.

PXAC192908FV Avg. rating / M : 1.0 rating-11

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PXAC192908FV Datasheet

Features and benefits

include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excelle.

Application

in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with.

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PXAC192908FV Page 1 PXAC192908FV Page 2 PXAC192908FV Page 3

TAGS
PXAC192908FV
Thermally-Enhanced
High
Power
LDMOS
FET
PXAC180602MD
PXAC182002FC
PXAC182908FV
Infineon
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