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PTFC270051M Datasheet, Infineon

PTFC270051M transistor equivalent, high power rf ldmos field effect transistor.

PTFC270051M Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 284.20KB)

PTFC270051M Datasheet
PTFC270051M Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 284.20KB)

PTFC270051M Datasheet

Features and benefits


* Unmatched
* Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efficiency = 62%
* Typical CW performance, 2170 MHz, 28 V - .

Application

with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performa.

Description

The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic packag.

Image gallery

PTFC270051M Page 1 PTFC270051M Page 2 PTFC270051M Page 3

TAGS

PTFC270051M
High
Power
LDMOS
Field
Effect
Transistor
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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