PTFC260202FC - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PTFC260202FC
Manufacturer	Infineon
File Size	305.74 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFC260202FC Datasheet
Additional preview pages of the PTFC260202FC datasheet.

Product details

Description

The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band.

Features

Broadband input matching.
Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB.
Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power.
Integrated ESD protection.
Human Body Model Class 1B (per ANSI/ESDA.

📁 Similar Datasheet

PTFC270101M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFC101C1G0 - Platinum Temperature Sensors (TE)
PTF - Metal Film Resistors (Vishay)
PTF080101 - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
PTF080101S - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
PTF080451 - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz (Infineon Technologies AG)
PTF080451E - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz (Infineon Technologies AG)
PTF080601 - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz (Infineon Technologies AG)

Other Datasheets by Infineon

PTFC261402FC - Thermally-Enhanced High Power RF LDMOS FET
PTFC262157FH - Thermally-Enhanced High Power RF LDMOS FET
PTFC262808SV - Thermally-Enhanced High Power RF LDMOS FET
PTFC210202FC - Thermally-Enhanced High Power RF LDMOS FET
PTFC270051M - High Power RF LDMOS Field Effect Transistor
PTFA041501E - Thermally-Enhanced High Power RF LDMOS FETs

Published: Nov 27, 2016 |