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PTFC260202FC Datasheet

Manufacturer: Infineon
PTFC260202FC datasheet preview

Datasheet Details

Part number PTFC260202FC
Datasheet PTFC260202FC-Infineon.pdf
File Size 305.74 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFC260202FC page 2 PTFC260202FC page 3

PTFC260202FC Overview

The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

PTFC260202FC Key Features

  • Broadband input matching
  • Typical CW performance, 2620 MHz, 28 V
  • Output power at P1dB = 25 W
  • Efficiency = 57%
  • Linear Gain = 19.4 dB
  • Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power
  • Integrated ESD protection
  • Human Body Model Class 1B (per ANSI/ESDA
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