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PTFC262157FH Datasheet, Infineon

PTFC262157FH fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFC262157FH Avg. rating / M : 1.0 rating-12

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PTFC262157FH Datasheet

Features and benefits

include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and supe.

Application

in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum performance as the.

Description

The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum performance as the peak side transistor in a Doherty amplifier.

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TAGS

PTFC262157FH
Thermally-Enhanced
High
Power
LDMOS
FET
PTFC262808SV
PTFC260202FC
PTFC261402FC
Infineon

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