PTFB201402FC transistor equivalent, high power rf ldmos field effect transistor.
* Broadband internal matching
* Typical CW performance, 28 V, single side
- Output power, P1dB = 70 W - Efficiency = 56%
* Integrated ESD protection
* .
in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device
offers excellen.
The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, th.
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