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PTFA260851E - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.

Key Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2 PTFA260851F Package H-31248-2 Efficiency (%) EVM (dBc) WiMAX EVM and Efficiency vs. Output Power VDS = 28 V, IDQ = 900 mA 25 -20 2.62 20 GHz 2.68 -25 GHz Efficiency 15 2.62 -30 10 -35 EVM 5 -40 0 -45 15 20 25 30 35 40 45 Outp.

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Datasheet Details

Part number PTFA260851E
Manufacturer Infineon
File Size 387.34 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA260851E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz PTFA260851E PTFA260851F Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2 PTFA260851F Package H-31248-2 Efficiency (%) EVM (dBc) WiMAX EVM and Efficiency vs. Output Power VDS = 28 V, IDQ = 900 mA 25 -20 2.62 20 GHz 2.68 -25 GHz Efficiency 15 2.