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Infineon Technologies Electronic Components Datasheet

PTFA260851E Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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Thermally-Enhanced High Power RF LDMOS FET
85 W, 2500 – 2700 MHz
PTFA260851E
PTFA260851F
Description
The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs
designed for WiMAX power amplifier applications in the 2500 to
2700 MHz band. Features include input and output matching, and
thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA260851E
Package H-30248-2
PTFA260851F
Package H-31248-2
WiMAX
EVM and Efficiency vs. Output Power
VDS = 28 V, IDQ = 900 mA
25 -20
2.62
20
GHz
2.68
-25
GHz
Efficiency
15 2.62
-30
10 -35
EVM
5 -40
0 -45
15 20 25 30 35 40 45
Output Power (dBm)
Features
• Thermally-enhanced, Pb-free and RoHS-compli-
ant packages
• Broadband internal matching
• Typical WiMAX performance at 2680 MHz, 28 V
- Average output power = 16 W
- Linear Gain = 14 dB
- Efficiency = 22%
- Error Vector Magnitude = –29 dB
• Typical CW performance, 2680 MHz, 28 V
- Output power at P–1dB = 100 W
- Efficiency = 47%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
85 W (CW) output power
RF Characteristics
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 16 W average, ƒ = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz
Characteristic
Gain
Drain Efficiency
Error Vector Magnitude
Symbol Min Typ
Gps — 14
ηD
EVM
— 22
— –29
Max
Unit
dB
%
dB
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 02.1, 2009-02-20


Infineon Technologies Electronic Components Datasheet

PTFA260851E Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 85 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
46.5 dBm (PEP)
Symbol
Gps
ηD
IMD
Min
13
33
PTFA260851E
PTFA260851F
Typ Max Unit
14 — dB
36 —
%
–30 –28 dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 900 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min Typ
65 —
——
——
— 0.095
2.0 2.5
——
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 85 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
437.5
2.5
–40 to +150
0.4
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA260851E V1
PTFA260851F V1
Package Type
H-30248-2
H-31248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA260851E
PTFA260851F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 02.1, 2009-02-20


Part Number PTFA260851E
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 11 Pages
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