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IQE057N10NM6CGSC - MOSFET

IQE057N10NM6CGSC Description

IQE057N10NM6CGSC MOSFET OptiMOSTM 6 Power-Transistor, 100 V .

IQE057N10NM6CGSC Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

IQE057N10NM6CGSC Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 5.7 mΩ ID 98 A Qoss 48 nC QG(0V10V) 26 nC Qrr (100A/µs) 37.6 nC PG-WHTFN-9 5 678 Pin 1 2 3 4 9 4 3 2 1 Drain Pin 5-8, tab Gate
* 1 Pin 9 Source Pin 1-4
* 1: Internal body diode Type

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