IQE050N08NM5SC - MOSFET

Datasheet Summary

Description

Features

Optimized for synchronous rectification.
N-channel, normal level.
Very low on-resistance RDS(on).
Superior thermal resistance.
100% avalanche tested.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

Infineon

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Datasheet Details

Part number	IQE050N08NM5SC
Manufacturer	Infineon
File Size	1.62 MB
Description	MOSFET
Datasheet	IQE050N08NM5SC Datasheet
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IQE050N08NM5SC MOSFET OptiMOSTM5Power-Transistor,80V Features •Optimizedforsynchronousrectification •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 5.0 mΩ ID 99 A Qoss 40 nC QG(0V...10V) 35 nC PG-WHSON-8 5 6 7 8 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode IQE050N08NM5SC Package PG-WHSON-8 Marking E RelatedLinks - Final Data Sheet 1 Rev.2.

Published: Aug 10, 2023 |