IQE050N08NM5CGSC - 80V MOSFET

Datasheet Summary

Description

Features

Optimized for synchronous rectification.
N-channel, normal level.
Very low on-resistance RDS(on).
Superior thermal resistance.
100% avalanche tested.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

Infineon

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Datasheet Details

Part number	IQE050N08NM5CGSC
Manufacturer	Infineon
File Size	1.56 MB
Description	80V MOSFET
Datasheet	IQE050N08NM5CGSC Datasheet
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IQE050N08NM5CGSC MOSFET OptiMOSTM5Power-Transistor,80V Features •Optimizedforsynchronousrectification •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 5.0 mΩ ID 99 A Qoss 40 nC QG(0V...10V) 35 nC PG-WHTFN-9 5 678 Pin 1 2 3 4 9 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 9 Source Pin 1-4 *1: Internal body diode Type/OrderingCode IQE050N08NM5CGSC Package PG-WHTFN-9 Marking R RelatedLinks - Final Data Sheet 1 Rev.2.

Published: May 16, 2025 |