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IPP076N12N3 - Power-Transistor

Download the IPP076N12N3 datasheet PDF. This datasheet also covers the IPP076N12N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.6 mW 100 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; halogen free.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPP076N12N3G-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Infineon

Part Number Description
IPP076N12N3G Power-Transistor
IPP076N15N5 MOSFET
IPP070N08N3 Power-Transistor
IPP070N08N3G Power-Transistor
IPP072N10N3 Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.