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IPB024N10N5 - MOSFET

Description

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Features

  • Ideal for high frequency switching and sync. rec.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

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IPB024N10N5 MOSFET OptiMOSª5Power-Transistor,100V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.4 mΩ ID 221 A Qoss 142 nC QG(0V..10V) 111 nC D²-PAK7pin tab 1 7 Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode IPB024N10N5 Package PG-TO263-7 Marking 024N10N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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