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IMBG120R045M1H Datasheet, Infineon

IMBG120R045M1H mosfet equivalent, 1200v sic trench mosfet.

IMBG120R045M1H Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 742.89KB)

IMBG120R045M1H Datasheet

Features and benefits


* Very low switching losses
* Short circuit withstand time 3 µs
* Fully controllable dV/dt
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* Robust.

Application


* Drives
* Infrastructure
  – Charger
* Energy generation - Solar string inverter and solar op.

Image gallery

IMBG120R045M1H Page 1 IMBG120R045M1H Page 2 IMBG120R045M1H Page 3

TAGS

IMBG120R045M1H
1200V
SiC
Trench
MOSFET
Infineon

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