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IMBG120R017M2H Datasheet, Infineon

IMBG120R017M2H mosfet equivalent, silicon carbide mosfet.

IMBG120R017M2H Avg. rating / M : 1.0 rating-16

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IMBG120R017M2H Datasheet

Features and benefits


* VDSS = 1200 V at Tvj = 25°C
* IDDC = 76 A at TC = 100°C
* RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload opera.

Application


* EV Charging
* Online UPS/Industrial UPS
* String inverter
* General purpose drives (GPD) Product vali.

Description

Pin definition:
* Pin 1 - Gate
* Pin 2 - Kelvin sense contact
* Pin 3…7 - Source
* Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R017.

Image gallery

IMBG120R017M2H Page 1 IMBG120R017M2H Page 2 IMBG120R017M2H Page 3

TAGS

IMBG120R017M2H
Silicon
Carbide
MOSFET
IMBG120R012M2H
IMBG120R008M2H
IMBG120R026M2H
Infineon

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