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IMBG120R026M2H Datasheet, Infineon

IMBG120R026M2H mosfet equivalent, 1200v sic mosfet.

IMBG120R026M2H Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.24MB)

IMBG120R026M2H Datasheet
IMBG120R026M2H Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.24MB)

IMBG120R026M2H Datasheet

Features and benefits


* VDSS = 1200 V at Tvj = 25°C
* IDDC = 53 A at TC = 100°C
* RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload opera.

Application


* EV Charging
* Online UPS/Industrial UPS
* String inverter
* General purpose drives (GPD) Product vali.

Description

Pin definition:
* Pin 1 - Gate
* Pin 2 - Kelvin sense contact
* Pin 3…7 - Source
* Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R026.

Image gallery

IMBG120R026M2H Page 1 IMBG120R026M2H Page 2 IMBG120R026M2H Page 3

TAGS

IMBG120R026M2H
1200V
SiC
MOSFET
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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