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IKW50N65ET7 - IGBT

Description

Package pin definition: Pin C & backside - Collector Pin E - Emitter Pin G - Gate C TO-247 3Pin 2021-10-27 restricted Type IKW50N65ET7 G E Package PG-TO247-3 Marking K50EET7 Copyright © Infineon T Datasheet www.infineon.com Please read the sections "I

Features

  • VCE = 650 V.
  • IC = 50 A.
  • Very low VCE,sat.
  • Low turn-off losses.
  • Short tail current.
  • Reduced EMI.
  • Very soft, fast recovery antiparallel diode.
  • Maximum junction temperature Tvjmax = 175°C.
  • Qualified according to JEDEC for target.

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Datasheet Details

Part number IKW50N65ET7
Manufacturer
File Size 1.46 MB
Description IGBT
Datasheet download datasheet IKW50N65ET7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IKW50N65ET7 Low loss Duopack: IGBT 7 Low loss Duopack: IGBT 7 with Trench and Fieldstop technology Features • VCE = 650 V • IC = 50 A • Very low VCE,sat • Low turn-off losses • Short tail current • Reduced EMI • Very soft, fast recovery antiparallel diode • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.
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