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CY15B108QN

Manufacturer: Infineon

CY15B108QN datasheet by Infineon.

CY15B108QN datasheet preview

CY15B108QN Datasheet Details

Part number CY15B108QN
Datasheet CY15B108QN-Infineon.pdf
File Size 443.67 KB
Manufacturer Infineon
Description LP Ferroelectric RAM
CY15B108QN page 2 CY15B108QN page 3

CY15B108QN Overview

Functional description The EXCELON™ LP CY15X108QN is a low power, 8-Mb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the plexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other...

CY15B108QN Key Features

  • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8
  • Virtually unlimited endurance 1000 trillion (1015) read/writes
  • 151-year data retention (See “Data retention and endurance” on page 26)
  • Infineon instant non-volatile write technology
  • Advanced high-reliability ferroelectric process
  • Fast serial peripheral interface (SPI)
  • Up to 40 MHz frequency
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
  • Sophisticated write protection scheme
  • Hardware protection using the Write Protect (WP) pin

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