CY15B108QN - LP Ferroelectric RAM

Infineon

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Datasheet Details

Part number	CY15B108QN
Manufacturer	Infineon
File Size	443.67 KB
Description	LP Ferroelectric RAM
Datasheet	CY15B108QN-Infineon.pdf

CY15B108QN Product details

Description

Functional description The EXCELON™ LP CY15X108QN is a low power, 8-Mb non-volatile memory employing an advanced ferroelectric process.A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM.It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories.Unlike serial flash and EEPROM, the CY15X108QN perform

Features

8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced high-reliability ferroelectric process.
Fast serial peripheral interface (SPI) - Up to 40 MHz frequency - Supports SPI mode 0 (0, 0) and mode 3 (1, 1).
Sophisticated write protection scheme -.

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Published: Feb 3, 2024 |