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CY15B108QN - LP Ferroelectric RAM

Description

The EXCELON™ LP CY15X108QN is a low power, 8-Mb non-volatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM.

Features

  • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced high-reliability ferroelectric process.
  • Fast serial peripheral interface (SPI) - Up to 40 MHz frequency - Supports SPI mode 0 (0, 0) and mode 3 (1, 1).
  • Sophisticated write protection scheme -.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY15B108QN, CY15V108QN 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced high-reliability ferroelectric process • Fast serial peripheral interface (SPI) - Up to 40 MHz frequency - Supports SPI mode 0 (0, 0) and mode 3 (1, 1) • Sophisticated write protection scheme - Hardware protection using the Write Protect (WP) pin - Software protection using Write Disable (WRDI) instruction - Software block protection for 1/4, 1/2, or entire array • Device ID and serial number - Ma
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