CY15B108QN
Features
- 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8
- Virtually unlimited endurance 1000 trillion (1015) read/writes
- 151-year data retention (See “Data retention and endurance” on page 26)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
- Fast serial peripheral interface (SPI)
- Up to 40 MHz frequency
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP) pin
- Software protection using Write Disable (WRDI) instruction
- Software block protection for 1/4, 1/2, or entire array
- Device ID and serial number
- Manufacturer ID and product ID
- Unique device ID
- Serial number
- Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Stored content can survive up to three standard reflow soldering cycles
- Low-power consumption
- 2.6 m A (typ) active current at 40 MHz
- 3.5 µA (typ) standby...
