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BSZ097N04LS G
OptiMOS™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type BSZ097N04LS G Package PG-TSDSON-8 Marking 097N04L
Product Summary V DS R DS(on),max ID 40 9.7 40 PG-TSDSON-8 V mΩ A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.
BSZ097N04LSG Datasheet
