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BSZ086P03NS3G - Power MOSFET

Features

  • single P-Channel in S3O8.
  • Qualified according JEDEC 1) for target.

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BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 8.
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