The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BSZ086P03NS3E G
OptiMOSTM P3 Power-Transistor
Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD protected • applications: battery management, load switching • Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID -30 8.
BSZ086P03NS3EG Datasheet
