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BSZ088N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications • Superior thermal resistance • Pb-free plating; RoHS compliant • Halogen free according to IEC61249-2-21 Type BSZ088N03MS G Package PG-TSDSON-8 Marking 088N03M
Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 8.0 9.7 40 PG-TSDSON-8 A V mΩ
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.
BSZ088N03MSG Datasheet
