2EDL23I06PJ driver equivalent, 600v half bridge gate driver.
* Infineon thin-film-SOI-technology
* Fully operational to +600 V
* Integrated Ultra-fast, low RDS(ON) Bootstrap Diode
* Floating channel designed for boo.
Product summary
VOFFSET IO+/- (typ.) VOUT Delay Matching tf/tr (typ. CL=4.9 nF)
= 620 V max. = 1.8 A/2.5 A = 10 V - 1.
The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations. Based on the used SOI-technology there is an excellent ruggedness on transient voltag.
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